Truth table for system of four NAND gates as shown in figure is

Previous Year Papers

Download Solved Question Papers Free for Offline Practice and view Solutions Online.

Test Series

Take Zigya Full and Sectional Test Series. Time it out for real assessment and get your results instantly.

Test Yourself

Practice and master your preparation for a specific topic or chapter. Check you scores at the end of the test.
Advertisement

 Multiple Choice QuestionsMultiple Choice Questions

1.

The temperature dependence of resistances of Cu and undoped Si in the temperature range 300-400 K is best described by:

  • Linear increase for Cu, linear increase for Si.

  • Linear increase for Cu, exponential increase for Si.

  • Linear increase for Cu, exponential decrease for Si.

  • Linear increase for Cu, exponential decrease for Si.

314 Views

2.

If a, b, c, d are inputs to a gate and x is its output, then, as per the following time graph, the gate is:


  • NOT

  • AND

  • OR

  • OR

356 Views

3.

Identify the semiconductor devices whose characteristics are given below, in the order (a), (b), (c), (d):

204 Views

4.

The forward biased diode connection is

237 Views

Advertisement
5.

The I-V characteristic of an LED is

221 Views

Advertisement

6.

Truth table for system of four NAND gates as shown in figure is


A.

280 Views

Advertisement
7.

A charge Q is uniformly distributed over the surface of non conducting disc of radius R. The disc rotates about an axis perpendicular to its plane and passing through its centre with an angular velocity ω. As a result of this rotation, a magnetic field of induction B is obtained at the centre of the disc. If we keep both the amount of charge placed on the disc and its angular velocity to be constant and vary the radius of the disc than the variation of the magnetic induction at the centre of the disc will be represented by the figure

817 Views

8.

The combination of gates shown below yields

  • OR gate

  • NOT gate

  • XOR gate

  • XOR gate

161 Views

Advertisement
9.

In a common emitter amplifier circuit using an n-p-n transistor, the phase difference between the input and the output voltages will be

  • 135°

  • 180°

  • 45°

  • 45°

427 Views

10.

A p–n junction (D) shown in the figure can act as a rectifier. An alternating current source (V) is connected in the circuit.

192 Views

Advertisement