For a P-N junction diode | Semiconductor Electronics: Materials, Devices and Simple Circuits

Previous Year Papers

Download Solved Question Papers Free for Offline Practice and view Solutions Online.

Test Series

Take Zigya Full and Sectional Test Series. Time it out for real assessment and get your results instantly.

Test Yourself

Practice and master your preparation for a specific topic or chapter. Check you scores at the end of the test.
Advertisement

 Multiple Choice QuestionsMultiple Choice Questions

31.

The manifestation of band structure in solids is due to

  • Heisenberg’s uncertainty principle

  • Pauli’s exclusion principle

  • Bohr’s correspondence principle

  • Bohr’s correspondence principle

455 Views

32.

When p-n junction diode is forward biased

  • the depletion region is reduced and barrier height is increased

  • the depletion region is widened and barrier height is reduced.

  • both the depletion region and barrier height reducedboth the depletion region and barrier height reduced

  • both the depletion region and barrier height reducedboth the depletion region and barrier height reduced

210 Views

33.

In an insulator, band gap of the order of

  • 0.1 eV

  • 1 eV

  • 5 eV

  • 100 eV


Advertisement

34.

For a P-N junction diode

  • Forward current in mA and reverse current is in µA

  • Forward current is in µA are reverse current is in mA

  • Both forward and reverse currents are in µA

  • Both forward and reverse currents are in mA


A.

Forward current in mA and reverse current is in µA

For a P-N junction diode, the forward current is in mA and reverse current is in µA. In forward bias the majority charge carriers drift in junction, while in reverse bias the majority charge carriers drift away from the junction, only minority charge carriers drift towards the junction.


Advertisement
Advertisement
35.

For a Zener diode

  • both p and n regions are heavily doped

  • p region is heavily doped but n region is lightly doped

  • n region is heavily doped but p region is lightly doped

  • both p and n regions are lightly doped


36.

The electron density of intrinsic semiconductor at room temperature is 1016 m-3. When doped with a trivalent impurity, the electron density is decreased to 1014 mat the same temperature. The majority carrier density is

  • 1016 m-3

  • 1018 m-3

  • 1021 m-3

  • 1020 m-3


37.

In a Zener diode regulated power supply, unregulated DC input of 10 V is applied. If the resistance (Rs) connected in series with a Zener diode is 200 Ω and the Zener voltage Vz =5V, the current across the resistance Rs is

  • 15 mA

  • 10 mA

  • 25 mA

  • 5 mA


38.

The circuit gives the output as that

    

  • AND gate

  • OR gate

  • NAND gate

  • NOR gate


Advertisement
39.

To detect light of wavelength 500 nm, the photodiode must be fabricated from a semiconductor of minimum bandwidth of

  • 1.24 eV

  • 0.62 eV

  • 2.48 eV

  • 3.2 eV


40.

For which one of the following input combinations, the given logic circuit gives the output Y = 1 ?

     

  • A = 0, B = 0, C = 0

  • A = 0, B = 1, C = 0

  • A = 0 ,B = 1, C = 1

  • A = 1 ,B = 1 ,C = 1


Advertisement