Which one of the following metals has a different lattice from th

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 Multiple Choice QuestionsMultiple Choice Questions

41.

A binary solid has a primitive cubical structure with B- ions constituting the lattice points and A+ ions· occupying 25% of its tetrahedral holes. The molecular formula of the crystal is

  • A2B

  • AB3

  • AB2

  • A2B3


42.

Which one of the following has a different crystal lattice from those of the rest?

  • Ag

  • V

  • Cu

  • Pt


43.

The lattice energy of NaCl is 788 kJ mol-1. This means that 788 kJ of energy is required

  • to separate one mole of solid NaCl into one mole of Na (g) and one mole of Cl (g) to infinite distance

  • to separate one mole of solid NaCl into one mole of Na+ (g) and one mole of Cl- (g) to infinite distance

  • to convert one mole of solid NaCl into one mole of gaseous NaCl

  • to convert one mole of gaseous NaCl into one mole of solid NaCl


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44.

Which one of the following metals has a different lattice from those of the others?

  • Fe

  • Co

  • Ni

  • Cu


A.

Fe

Among the given options, Iron (Fe) has bcc (hcp) lattice whereas other metals have ccp lattice. 


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45.

In face centred cubic unit cell, what is the volume occupied?

  • 43πr3

  • 83πr3

  • 163πr3

  • 64r333


46.

A solid compound contains X, Y and Z atoms in a cubic lattice with X atom occupying the comers. Y atoms in the body centred positions and Z atoms at the centres of faces of the unit cell. What is the empirical formula of the compound?

  • XYZ

  • X2Y2Z3

  • XYZ3

  • XY2Z3


47.

KCl crystallises in the same type of lattice as does NaCl. Given that rNa+/ rCl-= 0.55 and rK+/rCl-= =0.74. Calculate the ratio of the side of the unit cell for KCl to that of NaCl. 

  • 1.123

  • 0.0891

  • 1.414

  • 0.414


48.

The cubic unit cell of Al (molar mass 27 g mol-1) has an edge length of 405 pm. Its denstiy is 2.7g cm-3. The cubic unit cell is

  • face centred

  • body centred

  • primitive

  • edge centred


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49.

Density of a crystal remains unchanged as a result of:

  • ionic defect

  • Schottky defect

  • Frenkel defect

  • crystal defect


50.

High purity Si and Ge for semiconductor properties can be obtained by :

  • calcination

  • roasting

  • zone refining

  • thermic process


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