CBSE
To get an output Y = 1 from the circuit shown below, the input must be
A |
B |
C |
0 |
1 |
0 |
A |
B |
C |
0 |
0 |
1 |
A
|
B
|
C
|
1
|
0
|
1
|
A
|
B
|
C
|
1
|
0
|
1
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For transistor action
A) Base, emitter and collector regions should have similar size and doping concentrations.
B) The base region must be very thin and lightly doped.
C) The emitter-base junction is forward biased and base -collector junction is reverse biased
D) Both the emitter-base junction as well as the base-collector junction are forward biased.
(D) and (A)
(A) and (B)
(B) and (C)
(B) and (C)
The device that can act as a complete electronic circuit is
Junction diode
Integrated circuit
Junction transistor
Junction transistor
In the following figure, the diodes which are forward biased, are
Pure Si at 500 K has an equal number of the electron (ne) and hole (nh) concentrations of 1.5 x 1016 m-3.Doping by indium increases nh to 4.5 x 1022 m -3.The doped semiconductor is of
n- type with electron concentration ne = 5 x 1022 m -3
P- type with electron concentration ne = 2.5 x 1010 m -3
n- type with electron concentration ne = 2.5 x 1023 m -3
n- type with electron concentration ne = 2.5 x 1023 m -3
A transistor is operated in common emitter configuration VC = 2V such that change n the base current from 100 µA to 300 µA produces a change in the collector current from 10 mA to 20 mA. The current gain is
75
100
25
25
A common emitter amplifier has a voltage gain of 50, an input impedance of 100 Ω and an output impedance of 200 Ω. The power gain the amplifier is
500
1000
1250
1250
The input signal given to a CE amplifier having a voltage gain of 150 is The corresponding output signal will be
Which one of the following statement is false?
Pure Si doped with trivalent impurities given a p- type semiconductor
Majority carriers in a p- type semiconductor are holes
Minority carriers in a p- type semiconductor are electron
Minority carriers in a p- type semiconductor are electron
A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in the figure. The current through the diode is
10 mA
15 mA
20 mA
20 mA