In a common emitter (CE) amplifier having a voltage from Class Physics Semiconductor Electronics: Materials, Devices and Simple Circuits

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NEET Physics : Semiconductor Electronics: Materials, Devices and Simple Circuits

Multiple Choice Questions

181.

Which logic gate is represented by the following combination of logic gates ?

  • OR

  • NOR

  • AND

  • NAND



182.

Which type of gate the following truth table represents ?

     

  • NOT

  • AND

  • OR

  • NAND



183.

The depletion layer of a p-n junction

  • is of constant width irrespective of the bias

  • acts like an insulating zone under reverse bias

  • has a width that increases with an increase in forward bias

  • is depleted of ions



184.

In a common emitter configuration, a transistor has β = 50 and input resistance 1 kΩ. If the peak value of AC input is 0.01 V, then the peak value of collector current is

  • 0.01 µA

  • 0.25 µA

  • 100 µA

  • 500 µA



185.

In a n-type semiconductor, which of the following statement is true ?

  • Electrons are majority carriers and trivalent atoms are dopants

  • Electrons are minority carriers and pentavalent atoms are dopants

  • Holes are minority carriers and pentavalent atoms are dopants

  • Holes are majority carriers and trivalent atoms are dopants



186.

A junction diode has a resistance of 25 Ω when forward biased and 2500 Ω when reverse biased. The current in the diode, for the arrangement shown will be

  • 115 A

  • 17 A

  • 125 A

  • 1180A



187.

The output (X) of the logic circuit shown in figure will be

      

  • X = A= . B=

  • X = A . B¯

  • X = A .B

  • X = A + B¯



188.

A Si and a Ge diode has identical physical dimensions. The band gap in Si is larger than that in Ge. An identical reverse bias is applied across the diodes

  • The reverse current in Ge is larger than that in Si

  • The reverse current in Si is larger than that in Ge

  • The reverse current is identical in the two diodes

  • The relative magnitude of the reverse currents cannot be determined from the given data only



189.

In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and current gain 25. If the above transistor is replaced with another one with transconductance 0.02 mho and current gain 20, the voltage gain will

  • 23 G

  • 1.5 G

  • 13 G

  • 54 G



190.

Half-life of a radioactive substance is 20 min. The time between 20% and 80% decay will be

  • 20 min

  • 30 min

  • 40 min

  • 25 min



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